Carbon-nanoparticle-assisted growth of high quality bilayer WS2 by atmospheric pressure chemical vap

• 作 者: Jieyuan Liang Lijie Zhang Xiaoxiao Li Baojun Pan Tingyan Luo Dayan Liu Chao Zou Nannan Liu Yue Hu Keqin Yang Shaoming Huang
• 机 构: Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial T
• 出 处: 纳米研究（英文版）
• 发表日期: 2019年11期
• 关键词: bilayer WS2 growth carbon nanoparticles chemical vapor deposition (CVD)

Two-dimensional (2D) WS2 offers great prospects for assembling next-generation optoelectronic and electronic devices due to its thickness-dependent optical and electronic properties.However,layer-number-controlled growth of WS2 is still a challenge up to now.This work presents controlled growth of bilayer WS2 triangular flakes by carbon-nanoparticle-assisted chemical vapor deposition (CVD) process.The growth mechanism is also proposed.In addition,the field effect transistors (FETs) based on monolayer and bilayer WS2 are also fabricated and investigated.The bilayer FET displays a mobility of 34 cm2·V-1·s-1,much higher than that of the monolayer FET.The high figures of merit make bilayer WS2 a promising candidate in high-performance electronics and optoelectronics.