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A very shallow N-P junction has been produced on a silicon substrate using a low energy ion implantation(≤25keV) followed by suitable annealing. The junction is in parallel to the silicon surface and able to emit electrons out of the surface when biased in avalanche breakdown. The number of emitting electrons significantly depends on doping profiles, junction depth, and work function of the electron emitting material.This paper reports the calculation of the optimum theoretical doping profiles. The calculation indicates that the N+ layer thickness must be of the order of 100A to obtain high efficiency η defined as the number of electrons emission out of Si surface per total number of avalanche electrons. The experimental results of the N+-P junction with desirable doping profiles will also be presented. This topic is the basic investigation for the design and fabrication of vacuum silicon devices.
A very shallow NP junction has been produced on a silicon substrate using a low energy ion implantation (≤ 25 keV) followed by adapted annealing. The junction is in parallel to the silicon surface and able to emit electrons out of the surface when biased in avalanche breakdown The number of emitting junctions depends on doping profiles, junction depth, and work function of the electron emitting material. This paper reports the calculation of the optimum theoretical doping profiles. The calculation indicates that the N + layer thickness must be of the order of 100A to obtain high efficiency η defined as the number of electrons emission out of Si surface per total number of avalanche electrons. The experimental results of the N + -P junction with desirable doping profiles will also be presented. design and fabrication of vacuum silicon devices.