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本文报道了在710℃下Al_xGa_(1-x)As过冷式液相外延的短时间生长特性.在710℃下,降温速率为 0.45℃/分钟时“流动”机制被抑制.短时间生长以“表面反应”机制为主.产生了较大的等效过冷度,它是薄层生长的主要障碍.测得在710℃下As在Ga溶液中的扩散系数为2.3×10~(-3)cm~2/s.并测得界面过渡层厚度为170A.
In this paper, the short-time growth characteristics of Al x Ga 1-x As subcooled liquid phase epitaxy at 710 ℃ are reported.The “flow” mechanism is suppressed at a cooling rate of 0.45 ℃ / min at 710 ℃, The main mechanism of “surface reaction” is that a large equivalent degree of undercooling is produced, which is the main obstacle to the growth of thin films.The diffusion coefficient of As in Ga solution at 710 ℃ is measured as 2.3 × 10 -3 ) cm ~ 2 / s, and the interface transition layer thickness is 170A.