Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating subst

• 作 者: 陈刚 柏松 李哲洋 吴鹏 陈征 韩平
• 机 构: Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nan
• 出 处: Chinese Physics B
• 发表日期: 2009年10期
• 关键词: insulating purity drain MESFET fabricate doping breakdown periphery microwave tr

In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 μm gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave (CW) at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency (fT) and the maximum frequency (fmax) are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.

In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to The maximum current density is 440 mA / mm and the maximum transconductance is 33 mS / mm. For the continuous wave (CW) at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W / mm with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency (fT) and the maximum frequency (fmax) are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.