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以(Pb_(1-z/100)La_(x/100))Ti_(1-x/400)O_3(简称 PLT)烧结粉末为溅射靶材,用射频磁控溅射技术,研究了PLT 薄膜的淀积工艺及其结构和电光性能。在玻璃和(0001)Al_2O_3衬底上制备出了高度定向的 PLT 薄膜,而在(100)SrTiO_3衬底上外延生长出 PLT 薄膜。研究了玻璃衬底上生长高度定向 PLT 薄膜的机制。用新颖的法拉第磁光调制技术测量了 PLT 薄膜的电光系数,得到薄膜的二次方电光系数 R>0.6×10~(-15)(m/v)~2。
The PLT thin film was fabricated by RF magnetron sputtering with (Pb_ (1-z / 100) La_ (x / 100)) Ti_ (1-x / 400) O_3 Deposition process and its structure and electro-optical properties. Highly oriented PLT films were prepared on glass and (0001) Al_2O_3 substrates, whereas PLT films were epitaxially grown on (100) SrTiO_3 substrates. The mechanism of growth of highly oriented PLT thin films on glass substrates was investigated. The electro-optic coefficient of PLT thin film was measured by a novel Faraday magneto-optical modulation technique, and the quadratic electro-optic coefficient R> 0.6 × 10 ~ (-15) (m / v) ~ 2 was obtained.