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超大规模集成电路设计和制造过程中,基于栅氧化层击穿的天线效应已得到广泛研究。从一个数模转换电路的漏电失效案例分析着手,利用电性分析、物理失效分析、工艺排查结合电路设计分析等手段,研究了一种与栅氧化层无关的天线效应。结果发现这种新的天线效应发生在高密度等离子体淀积介质层的工艺过程中,相邻金属互连长导线因不同的接地方式而具有不同的电势差,造成金属互连导线间的击穿和漏电。同时给出了该种天线效应的解决方案,该结果为半导体工艺设计规则制定提供了新的参考。
Antenna effects based on gate oxide breakdown have been extensively studied in the design and fabrication of VLSI circuits. From a case analysis of the leakage failure of a digital-analogue conversion circuit, an antenna effect unrelated to the gate oxide was studied by means of electrical analysis, physical failure analysis, process investigation and circuit design analysis. The results show that the new antenna effect occurs in the process of high-density plasma deposition of dielectric layers. The adjacent long wires of the metal interconnect have different potential differences due to different grounding methods, resulting in breakdown between the metal interconnection wires And leakage. At the same time, the solution to the antenna effect is given. The result provides a new reference for the design of semiconductor process.