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针对传统失效定位技术如光辐射显微镜(EMMI)、光束感生电阻变化(OBIRCH)和红外成像等无法追踪时序逻辑电路内部的传输信号、失效位置定位偏差大等问题,介绍了一种激光电压探测及成像的失效分析技术。首先对晶圆扫描分析系统及激光电压探测成像技术进行简要介绍,基于晶圆扫描分析系统应用激光电压探测及成像技术对标准单元中的时序逻辑电路进行失效分析。结果显示激光电压探测成像技术可以有效地对标准单元内部频率信号进行追踪和信号波形测量并成像,结合电路原理分析以及芯片版图可以精确定位失效点,并进一步对失效位置和失效原因进行物性失效分析,最终建立失效模式。
Aiming at the problems that traditional failure location technologies such as light-emitting microscope (EMMI), beam-induced resistance change (OBIRCH) and infrared imaging can not trace the transmission signals inside the sequential logic circuits and the large deviation of the failure position, a laser voltage detection And imaging failure analysis techniques. First of all, the wafer scanning analysis system and laser voltage detection imaging technology are briefly introduced. Based on the wafer scanning analysis system, laser voltage detection and imaging technology is used to analyze the failure of sequential logic circuits in standard cells. The results show that the laser voltage detection and imaging technology can effectively track and signal the internal frequency signal of the standard cell and image the signal. Combining the circuit principle analysis and the chip layout, the failure point can be pinpointed, and the failure analysis of the failure location and failure cause can be further analyzed. , Eventually establishing a failure mode.