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利用低压金属有机物气相沉积 (L P- MOCVD)技术 ,采用两步生长法 ,在 (0 0 0 1 )蓝宝石衬底上获得了纤锌矿结构的 Zn1 - x Mgx O合金单晶薄膜 .实验发现随着 Mg原子的增多 ,Zn Mg O的晶格常数逐渐减小 .X射线衍射谱中未出现除 (0 0 0 2 )峰之外的其他峰位 ,表明该合金薄膜具有很强的择优取向和较好的晶体质量 .室温透射谱与光致发光谱显示 ,其吸收边或带边发光峰随 Mg原子浓度的增加首先出现红移然后出现蓝移 .该反常现象与 Zn Mg O薄膜中产生的杂质缺陷的行为有关 .研究表明在 MOCVD生长 Zn Mg O合金薄膜过程中 ,必须优化与控制反应条件 ,以抑制杂质缺陷的产生
The wurtzite Zn1 - xMgxO single crystal films were obtained on a (0 0 0 1) sapphire substrate by low pressure metalorganic vapor deposition (L P-MOCVD) and two-step growth method. With the increase of Mg atom, the lattice constant of Zn Mg O decreases gradually, and no other peak except for the (0 0 0 2) peak appears in the X-ray diffraction spectrum, indicating that the alloy film has a strong preferred orientation and Better crystal quality.The room-temperature transmission spectra and photoluminescence spectra showed that the absorption edge or edge emission peak first appeared red-shifted and then blue-shifted with the increase of Mg atom concentration.This anomaly was related to the Impurity defect behavior.The research shows that in the MOCVD growth of Zn Mg O alloy thin film, the reaction conditions must be optimized and controlled to suppress the generation of impurity defects