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一、前言单晶硅在氢氟酸中进行阳极处理之后可使其表面变成在化学上较为活泼的多孔性硅(以后称为多孔性硅)。这现象与硅的电解腐蚀有关,Turner等人对此已作过报导。此后一些作者着重从多孔性硅易于氧化这一特点出发,开始研究在硅器件的制造工艺中用多孔性硅形成厚绝缘层。如图1表示的集成电路元件的隔离结构,既有效又适用,在一些文章中已讨论过。
I. INTRODUCTION Monocrystalline silicon, after anodization in hydrofluoric acid, can turn its surface into a chemically more active porous silicon (hereinafter referred to as porous silicon). This phenomenon is related to the electrolytic corrosion of silicon, which Turner et al. Have reported. Since then, some authors have focused on the easy oxidation of porous silicon, and began to study the formation of thick insulating layers using porous silicon in the manufacturing process of silicon devices. The isolation structure of an integrated circuit element, as shown in FIG. 1, is both efficient and useful and has been discussed in some articles.