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随着器件尺寸的缩小,精确的数值分析就是具有十分重要的意义。本文将讨论器件模型,包括由空穴和电子连续方程组成的三维输运方程,不但包括了复合效应,也包括了高掺杂效应。 非线性方程可用文中提出的近似等法来线性化。通常可采用的数值分析方法有两种:直限元素法FEM和有限差方法FDM。在FEM中,由于是局部单元数值其总的节点数比在FDM中要少。然而,解出这个结果的方法由于需要存储容量随n~k((?)>1)成正比地迅速增大,可用定向技术来限制。用FDM矩阵通过利用栅状网格来形成一个带状结构。一种充分考虑了FDM的特点的特定驰预等法是可取的。这样所需的存储容量
As device sizes shrink, accurate numerical analysis is of great importance. This article will discuss the device model, including a three-dimensional transport equation consisting of a continuum of holes and electrons that includes not only the recombination effect but also the high doping effect. Nonlinear equations can be approximated by the proposed method to linearize. There are two commonly used numerical methods: the finite element method FEM and the finite difference method FDM. In the FEM, the total number of nodes in the FEM is less than in the FDM due to the local cell values. However, the method of solving this result can be limited by the orientation technique because the storage capacity needs to increase rapidly in proportion to n ~ k ((?)> 1). A FDM matrix is used to form a ribbon structure by using a grid of grids. A specific preemptive approach that takes full account of the characteristics of FDM is desirable. This required storage capacity