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H＋离子注入Si片并经一定条件退火，可在Si片中形成埋层微空腔（microcavity）层，结合Si片键合技术，用智能剥离（Smart－cut）技术成功地制备了Unibond－SOI材料，并用扩展电阻（SRP）、卢瑟福背散射（RBS／C）和剖面透射电子显微镜（XTEM）等初步分析了其结构和电学性质．
H + ions were implanted into the Si wafer and annealed under certain conditions to form a buried microcavity layer in the Si wafer. Unibond-SOI was successfully prepared by the smart-cut technique in combination with Si wafer bonding technology. The structure and electrical properties of the materials were also analyzed by using extended resistance (SRP), Rutherford backscattering (RBS / C) and cross section transmission electron microscopy (XTEM).