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利用Si和C粉末的自蔓延高温合成反应合成SiC陶瓷，研究合成温度对反应产物形貌和组成以及Ni添加剂对合成温度的影响。试验结果表明SiC陶瓷的最低合成温度在1500℃～1600℃之间，添加适量的Ni粉后，可以有效地降低SiC的合成温度。
SiC ceramics were synthesized by self-propagating high-temperature synthesis of Si and C powders. The effect of synthesis temperature on the morphology and composition of the reaction products and the effect of Ni additives on the synthesis temperature were investigated. The experimental results show that the minimum synthesis temperature of SiC ceramics is between 1500 ℃ and 1600 ℃, and the addition of appropriate amount of Ni powder can effectively reduce the synthesis temperature of SiC.