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介绍了以硝酸锆、醋酸铅和钛酸四丁酯为原料用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法在硅衬底上制备Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３（ＰＺＴ）铁电薄膜的工艺流程。对铁电薄膜的表面形貌、晶化程度、界面状态等性质进行了分析，结果表明硅基ＰＺＴ薄膜形成了良好的钙钛矿结构。并在此基础上实现了制备ＰＺＴ铁电薄膜的低温改进工艺。
The technological process of preparing Pb (Zr0.53Ti0.47) O3 (PZT) ferroelectric thin film on silicon substrate by using sol - gel method with zirconium nitrate, lead acetate and tetrabutyl titanate as raw materials . The surface morphology, degree of crystallization and interface state of the ferroelectric thin films were analyzed. The results show that the PZT thin films have good perovskite structure. On the basis of this, the low temperature improvement process of preparing PZT ferroelectric thin films was realized.