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栅氧化膜介质是制作MOS电路的关键工艺之一。过去一些年来大量地开展了关于制备优质二氧化硅栅介质膜的研究,认为在热氧化生长二氧化硅时在氧化气氛中适当地添加氯化物是很有裨益的。添加三氯乙烯于氧化气氛中是其中的有效方法之一。本实验对表征含氯量的一些参数(如攜带气体流量、三氯乙烯沅温等)进行适当控制,获得较为满意的结果。并发现不同的衬底要求不同的含氯量,相应的调节在电路制作中实现了对开放电压的控制。在采用了分段退火法后基本上消除了C-V特性曲线的滞后效应。
Gate oxide film dielectric MOS circuit is one of the key processes. Research on the preparation of high quality silicon dioxide gate dielectric films has been carried out extensively over the past few years and it is considered beneficial to add chloride appropriately in an oxidizing atmosphere upon thermal oxidation of the silicon dioxide. Adding trichlorethylene in an oxidizing atmosphere is one of the effective methods. In this experiment, some parameters that characterize the chlorine content (such as the carrier gas flow, Trichlorethylene temperature, etc.) were properly controlled to obtain more satisfactory results. And found that different substrates require different chlorine content, the corresponding adjustment in the circuit to achieve the open-voltage control. The hysteresis effect of the C-V characteristic curve is basically eliminated by using the segmented annealing method.