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业已用一定比例的SiH_4/SiCl_4混合源,生长了突变浓度分布的N/N~+和P/N/N~+层.发现混合源生长外延层的N~+-N过渡区宽度以及N-P之间的补偿区宽度均窄于用SiH_4或SiCl_4单一源生长的情况.
N / N ~ + and P / N / N ~ + layers with abrupt concentration distribution have been grown with a certain proportion of SiH_4 / SiCl_4 mixed source.The width of the N ~ + -N transition region in the mixed source growth epitaxial layer The width of the compensation zone is narrower than that of SiH4 or SiCl4 single source.