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用紫外光电子能谱(UPS)和x光电子能谱(XPS)研究了十分之几单层(ML)的氧化学吸附在GaAs(110)清洁解理面后,对随后淀积的金属与GaAs所形成的界面的影响。实验表明,表面氧不仅在金属覆盖的初始阶段(少于0.2ML)阻止金属原子或成团金属与衬底的直接作用,而且在金属(包括贵金属银、金和活泼金属铝)覆盖量增加时,延滞了金属与衬底的混杂或直接作用,氧的存在又延迟了三维岛状结构的形成。虽然化学行径与铝不同的银和金在氧化的GaAs表面有不少相似,但从自旋轨道分裂峰出现的差异中,包隐着两种界面的差别。
The chemical adsorption of a few tenths of a single layer (ML) on GaAs (110) cleansing cleaved surfaces was studied by UV and XPS, and the subsequent deposition of metals and GaAs Impact of the formation of the interface. Experiments have shown that surface oxygen not only prevents the direct interaction of metal atoms or agglomerates with the substrate at the initial stages of metal coverage (less than 0.2 ML), but also increases as the coverage of metals (including noble metal silver, gold and active aluminum) increases , Hindering the confounding or direct action of the metal and the substrate, and the existence of oxygen delays the formation of a three-dimensional island structure. Although the chemical behavior of silver and gold, which are different from those of aluminum, is similar on the surface of oxidized GaAs, the difference between the splitting peaks of the spin orbit is implicit in the difference between the two interfaces.