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由于其丰富的物理内涵和广泛的应用前景,忆阻器是近年来相关领域的研究热点。作为忆阻器的一个主要的应用,阻变存储器也得到了人们的诸多关注。但是,阻变存储器的交叉阵列结构存在明显而严重的串扰问题。本文介绍和论证了交叉阵列结构的两种评估方法。结果显示,对于单根位线上拉方法,交叉阵列尺寸不会大于3×3=9 bit,且这一结论与具体的高、低阻态的阻值无关;而对于所有位线上拉方法,忆阻器的高、低阻态比越大,交叉阵列的最大存储容量就越大。
Due to its rich physical connotation and wide application prospects, memristors are the hot topics in related fields in recent years. As one of the main applications of memristor, resistive variable memory has also attracted a great deal of attention. However, there is a significant and serious crosstalk problem with the cross-array structure of the resistive memory. This article describes and demonstrates two methods of evaluating cross-array architectures. The results show that for a single bit-line pull-up method, the cross-array size will not be larger than 3 × 3 = 9 bit, and this conclusion is not related to the specific high and low resistance values. For all bit-line pull- , Memristor high, low impedance ratio is larger, the greater the maximum cross-array storage capacity.