论文部分内容阅读
为将零温度系数SAW器件与有源半导体器件集成在一块芯片上,需采用新的薄膜技术,这种结构拟称为Si/蓝宝石或Si基片射频集成电路(RFIC)。AlN薄膜由于具有高的SAW速度,所以适用于工作频率达千兆赫以上的SAW器件。已制成了工作频率达1GHz以上的AlN/蓝宝石结构的零温度系数SAW延迟线。本文讨论下述研究工作的近况:(1)材料生长及AlN材料常数的估价;(2)SAW传播损耗及色散与频率和膜厚的关系;(3)AlN薄膜的质量对延时温度系数的影响;(4)AlN薄膜在RF电路集成化中的潜在应用;(5)温度对SAW相关器性能的影响。
In order to integrate the zero temperature coefficient SAW device and the active semiconductor device on a single chip, a new thin film technology is required, which is called Si / sapphire or Si substrate radio frequency integrated circuit (RFIC). AlN films, due to their high SAW speed, are suitable for SAW devices operating above GHz. A zero-temperature coefficient SAW delay line of an AlN / sapphire structure operating above 1 GHz has been fabricated. The current status of the following research work is discussed: (1) material growth and the valuation of AlN material constants; (2) the relationship between SAW propagation loss and dispersion with frequency and film thickness; (3) the effect of the mass of AlN film on the delay temperature coefficient (4) the potential application of AlN film in the RF circuit integration, and (5) the effect of temperature on the performance of the SAW correlator.