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目的:探讨半导体激光照射预防正畸微种植体周围炎的临床效果。方法:采用随机对照原则选择80例患者分成实验组和对照组,各40例,均选择双侧上颌第二前磨牙和第一磨牙牙根之间颊侧牙槽骨植入微种植体。术后实验组采用半导体激光照射微种植体周围组织:术后第一周每侧照射10min,每日一次,连续七天;术后第二周起每3天照射一次,直至取下微种植体;并作规范化健康教育。对照组仅做规范化健康教育。于术后第7天、1月、3月评价实验组和对照组微种植体菌斑指数、种植体体周软组织指数,记录微种植体周围炎例数、种植体松动例数。结果:术后第7天、1月、3月实验组菌斑指数和体周软组织指数均低于对照组,实验组发生微种植体周围炎和微种植体松动例数低于对照组,P均<0.05,差异具有统计学意义。结论:半导体激光结合规范健康教育可有效预防正畸微种植体周围炎,值得临床推广。
Objective: To investigate the clinical effect of semiconductor laser irradiation in preventing peri-implantitis of orthodontic implants. Methods: Eighty patients were randomly divided into experimental group and control group, with 40 cases in each group. All implanted micro-implants were selected from the buccal alveolar bone between the maxillary second premolars and the first molar. Postoperative experimental group using semiconductor laser irradiation micro-implant around the organization: each side of the first week after irradiation 10min, once daily for seven days; the second week after the second irradiation every three days until the removal of micro-implants; And for standardized health education. The control group only standardized health education. The plaque index, the peri-implant soft tissue index, the number of peri-implant micro-implants and the number of loosening implants in the experimental group and the control group were evaluated on the 7th day, the 1st and the 3rd month after the operation. Results: The plaque index and peri-soft tissue index of the experimental group were lower than those of the control group on the 7th day, the 1st and the 3rd month after operation. The number of micro-implant peri-implantitis and micro-implant loosening in the experimental group was lower than that of the control group, P All <0.05, the difference was statistically significant. Conclusion: The combination of semiconductor laser and standard health education can effectively prevent peri-implantitis, which is worthy of clinical promotion.