,Field Effect Transistor with Self-Organized In0.15 Ga0.85As/GaAs Quantum Wires as a Channel Grown o

• 作 者: 李献杰 闫发旺 张文俊 张荣桂 刘伟吉 敖金平 曾庆明 梁春广 刘式墉
• 机 构: HeBei Semiconductor Research Institute,Shijiazhuang,050051“,”Department of Electronic Engineering, J
• 出 处: 中国物理快报（英文版）
• 发表日期: 2001年8期

A functional field effect transistor with self-organized In0.15Ga0.85As/GaAs quantum wires (QWRs) as a channel was achieved by molecular beam epitaxy on a (553)B GaAs substrate. Both the three-dimensional image of atomic force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a selforganized QWR structure. The device with a gate length of 2 um and a source-drain spacing of 5um performed a good enhancement-mode characteristic and a moximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate width at room temperature. The saturated drain current is as high as 5.6 mA. The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer. In addition, the effective gate width was discussed in comparison with the geometric gate width of the device, from which a larger maximum transconductance of 130 mS/mm could be estimated.