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本文讨论一种改进形式的渡越时间负阻二极管。在这种器件中,载流子进入渡越空间以前,先利用场加速的扩散产生π/2以上的相延迟,以改善微波特性。初步分析说明,这种器件比国外报导的穿通注入渡越时间二极管(又称势垒注入渡越时间二极管)有更好的微波性能。器件的优值(负Q值)可低于10,10千兆赫下效率可达10～20％,连续波输出功率超过1瓦。若进一步提高其大电流工作能力,可望输出更大的连续波功率。这种器件有可能作成一种低噪声微波功率源。
This article discusses an improved form of transit time negative-resistance diodes. In this device, prior to the carrier into the transit space, the first use of field-accelerated diffusion to produce phase delay above π / 2, in order to improve the microwave characteristics. Preliminary analysis shows that this device has better microwave performance than the reported punch-through time-of-flight diodes (also known as barrier injection time-of-flight diodes). Device excellent value (negative Q value) can be less than 10,10 gigahertz efficiency up to 10 ~ 20%, continuous wave output power of more than 1 watt. If we can further improve its high current capacity, it is expected to output a larger continuous wave power. This device may make a low-noise microwave power source.