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ＳＯＩ－ＣＭＯＳ电路具有高速度、低功耗、抗辐照等优点。用氧、氮离子注入硅中，得到性能良好的ＳＩＭＯＸ和ＳＩＭＮＩ薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了 ＳＯＩ材料表面界面的电学性能。并对各种方法进行了讨论。结果显示；用分步注入和分步退火制备的ＳＯＩ材料大大地改善了材料的电学性能。
SOI-CMOS circuit with high speed, low power consumption, anti-radiation advantages. With oxygen, nitrogen ions into silicon, get good performance SIMOX and SIMNI film material. The electrical properties of SOI materials at the surface were investigated by means of extended resistance, Hall effect and deep level transient spectroscopy. Various methods were discussed. The results show that the SOI material prepared by step injection and step annealing greatly improves the electrical properties of the material.