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为掌握ＰＭＯＳ剂量计的应用方式并提高其应用精度，研究了ＰＭＯＳ剂量计的辐照剂量记录－阈电压在室温下的长期退火表现。结果表明：氧化物电荷的隧道退火与界面态的后生长效应是造成退火的原因，ＰＭＯＳ剂量计辐照及贮藏偏置是决定其退火方向和程度大小的重要因素。负偏置条件能较好地保持其辐照记录，在正偏置贮存下的退火较大。
In order to understand the application of PMOS dosimeter and improve its application accuracy, the long-term annealing of PMOS dosimeter at room temperature under the dose-recording-threshold voltage was studied. The results show that the tunneling annealing of oxide charge and the post-growth effect of interface state are the causes of annealing. The radiation and storage bias of PMOS dosimeter are the important factors that determine the annealing direction and extent. Negative bias conditions can better maintain their radiation records, annealing in the positive bias storage larger.