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一、序言近年来,随着集成电路的发展和固体器件的高频化,要求硅外延片的生长层厚度要很薄,且在与基片的界面处杂质分布很徒。这样的片子,在高速变容二极管、双极集成电路、高频晶体管或以PIN二极管、碰撞雪崩渡越时间二极管等为代表的微波二极管的制作中更是不可缺少。这些器件一般是在具有高浓度杂质的硅基片上或在掺杂了高浓度杂质的区域上生长具有低浓度杂质的硅外延层上制作的。一般,硅外延生长是利用调节掺杂气体的浓度或流量来控制杂质浓度。可是,在具有高浓度杂质的基片上生长具有低
I. Introduction In recent years, with the development of integrated circuits and the high frequency of solid state devices, the thickness of the growth layer of the silicon epitaxial wafer needs to be very thin, and the impurity distribution at the interface with the substrate is very small. Such a film is indispensable in the production of microwave diodes typified by high-speed varactors, bipolar integrated circuits, high-frequency transistors, or PIN diodes and impact avalanche transit time diodes. These devices are typically fabricated on silicon substrates with high concentration of impurities or on silicon epitaxial layers with low concentration of impurities on regions doped with high concentration of impurities. In general, silicon epitaxial growth is the use of doping gas concentration or flow control to control the concentration of impurities. However, growth on substrates with high concentration of impurities has low