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本文介绍了利用现有5μm工艺设备进行1～2μm窄条的光刻技术,着重对光刻SiO_2窄条和金属连线方面作了具体的介绍。对优化的“发射区两次错位光刻”和“多晶发射极自对准”工艺技术作了较详细的叙述。
This article describes the use of existing 5μm process equipment for narrow 1 ~ 2μm lithography technology, focusing on photolithography SiO_2 narrow and metal connections made a specific introduction. The optimized technique of “twice offset lithography in the emitter region” and “polycrystalline emitter self-alignment” are described in more detail.