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用硼掺杂多晶硅作为I~2L器件P型区的扩散源同时起着导电层的作用,使P型区不用接触孔。与常规工艺相比,这种工艺具有较大的扇出能力和较小的尺寸,布线更为灵活。
Polysilicon doped with boron as I ~ 2L P-type device area diffusion source at the same time play a role in the conductive layer so that the P-type area without contact holes. Compared with the conventional process, this process has a larger fan-out capacity and smaller size, wiring more flexible.