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美国Bell实验室的W.T.Tsang等人在第6届光纤通信-集成光学,光纤通信国际会议(OFC/IOOC,1987)上报导了一种掺铒半导体注入式新型激光器结构。这种新结构是利用在半导体激光器的有源层内掺有0.5％的稀土元素—铒,从而使稀土元素的原子能级跃迁产生的窄增益谱叠加在基质半导体的较宽增益谱之上,结果稀土跃迁波长下的增益很高,首先克服腔损耗而达到激射作用。在1.55μm波长下,腔长250μm激光器的纵模间隔为
W.T.Tang, et al. From Bell Labs of the United States reported a novel erbium-doped semiconductor laser structure at the 6th International Conference on Optical Communications - Integrated Optical and Optical Fiber Communications (OFC / IOOC, 1987). This new structure utilizes a narrow gain spectrum of 0.5% rare earth element-erbium doped in the active layer of a semiconductor laser such that the atomic gain transition of the rare earth element is superimposed on the wider gain spectrum of the host semiconductor. As a result Rare earth transition wavelength gain high, first of all to overcome the cavity loss and lasing effect. At a wavelength of 1.55 μm, the longitudinal mode spacing of a laser with a cavity length of 250 μm is