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制备均匀的接近完整的Hg_(1-x)Cd_xTe单晶非常困难,其主要原因是:CdTe对HgTe的分凝很严重;HK的蒸汽压很高。然而,采用富Te的Hg_(1-x)Cd_xTe溶液来生长Hg_(1-x)Cd_xTe薄膜,可把汞压降到大约0.1atm左右。这对于制备高质量的Hg_(1-x)Cd_xTe材料具有很大的潜力。本文叙述了所采用的一种新的、开管、水平滑移接触型液相外廷(LPE)生长工艺。在这种工艺中,采用一种改进的水平外延系统,控制了系统的汞压,从而也就控制了外延溶液的组分,生长出了均匀的HgCdTe薄膜。
It is very difficult to prepare uniform Hg1-x CdxTe single crystal. The main reason is that the segregation of HgTe by CdTe is very serious, and the vapor pressure of HK is very high. However, using Hg_ (1-x) Cd_xTe solution enriched in Te to grow Hg_ (1-x) Cd_xTe films can reduce the mercury pressure to about 0.1 atm. This has great potential for preparing high quality Hg_ (1-x) Cd_xTe materials. This paper describes a new, open-tube, horizontal sliding contact liquid phase epitaxy (LPE) growth process. In this process, an improved horizontal epitaxy system was used to control the mercury pressure in the system, thereby controlling the composition of the epitaxial solution and growing a uniform HgCdTe film.