Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam

• 出 处: Optoelectronics Letters
• 发表日期: 2006年05期
• 关键词: amorphous refractive extinction evaporation spectroscopic ordinary conductance c

In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated.It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times.This has never been reported before of amorphous Si with electron beam evaporation deposition.

In this paper, the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated. It was found that the bombardment increases the light absorption by two to eleven times and increases the conduct of the film by 3 000 times .This has never been reported before amorphous Si with electron beam evaporation deposition.