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发展计算机辅助电路仿真方法使MOS集成电路的设计、表征和最佳化成为可能。直流特性和瞬态特性的计算,是根据制造工艺数据摘录的并结合分析器件模型得出的物理器件参数来进行的。已经证明任何MOS电路结构(具有相关的串联阻抗和寄生器件)可以利用一个等效反相器来分析。用负载I-V特性曲线和晶体管I-V特性曲线的叠加得到输入-输出转换特性曲线,以提供直流“最坏情况”设计所必需的数据。可用一个简单的器件模型来计算电路瞬态响应。所有计算出的特性曲线与对集成电路进行的测量相当符合。
The development of computer aided circuit simulation method makes it possible to design, characterize and optimize MOS integrated circuits. DC characteristics and transient characteristics are calculated based on the physical device parameters extracted from the manufacturing process data combined with the analysis of the device model. It has been demonstrated that any MOS circuit structure (with associated series impedance and parasitic devices) can be analyzed using an equivalent inverter. The input-to-output conversion characteristic curve is derived from the superposition of the load I-V characteristic and the transistor I-V characteristic to provide the data necessary for the “worst-case” DC design. A simple device model can be used to calculate circuit transient response. All the calculated characteristic curves are in good agreement with the measurements made on the integrated circuit.