Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using

• 作 者: 杨丽媛 薛晓咏 张凯 郑雪峰 马晓华 郝跃
• 机 构: Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi
• 出 处: Chinese Physics B
• 发表日期: 2012年07期
• 关键词: AlGaN transistor drain finger heating junction Electron dissipation calibration

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.

Self-heating in a multifinger AlGaN / GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The operating temperature of the AlGaN / GaN HEMT is estimated from the calibration curve of a passively heated AlGaN / GaN structure. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ° C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.