NTT开发出从蓝宝石基板剥离GaN类半导体薄膜元件的工艺

• 作 者: 郑冬冬
• 出 处: 半导体信息
• 发表日期: 2012年03期
• 关键词: 半导体薄膜 GaN NTT 基板 日本电信 氮化钾 膜元件 薄膜 太阳能电池 层状

日本电信电话(NTT)宣布,开发出了可将LED等使用的GaN(氮化钾)类半导体薄膜元件从蓝宝石基板上轻松剥离下来的工艺。采用该技术能够以低成本制造厚度为2

Nippon Telegraph and Telephone (NTT) announced that it has developed a process that allows easy stripping of GaN (semiconductor-on-insulator) thin film semiconductor elements such as LEDs from a sapphire substrate. With this technology, a thickness of 2 can be manufactured at a low cost