The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

• 作 者: Yongkang Xu Sannian Song Wencheng Fang Chengxing Li Zhitang Song
• 机 构: State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and I
• 出 处: 半导体学报（英文版）
• 发表日期: 2020年12期
• 关键词: new phase change material inductively couple plasma etching process etching char

Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar.The results showed that when CF4/Ar =25/25,the etching power was 600 W and the etching pressure was 2.5 Pa,the etching speed was up to 61 nm/min.The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°),smooth surface of the etching (RMS was 0.51nm),and the etching uniformity was fine.Furthermore,the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS).The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).