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给出了一个采用TSMC0.18μm CMOS工艺设计并实现的12路30Gb/s并行光接收前端放大器.电路设计采用RGC结构和噪声优化技术,克服了CMOS光检测器大寄生电容造成的带宽不够的问题.测试结果表明,在2pF的寄生电容下单信道传输速率达到了2.5Gb/s,在0.8mVpp输入下得到了清晰的眼图.提出了一种同时采用p+保护环(PGR)、n+保护环(NGR)和深n阱(DNW)的并行放大器隔离结构,有效地抑制了并行放大器之间的串扰,减小了放大器之间的衬底耦合噪声.测量结果表明,这种结构与PGR和PGR+NGR相比,在1GHz时放大器之间的隔离度分别提高了29.2和8.1dB,在2GHz时放大器之间的隔离度分别提高了8.1和2.5dB.芯片采用1.8V电源供电,单路前端放大器的功耗为85mW,12路总功耗约为1W.
A 12-channel 30Gb / s parallel photoreceptor front-end amplifier designed and implemented in TSMC 0.18μm CMOS process is presented.The circuit design uses RGC structure and noise optimization technology to overcome the problem of insufficient bandwidth caused by large parasitic capacitance of CMOS photodetector The test results show that the single-channel transmission rate achieves 2.5Gb / s at a parasitic capacitance of 2pF, and a clear eye diagram is obtained under the input of 0.8mVpp. A p + protection ring (PGR) (NGR) and deep n-well (DNW) parallel amplifier isolation structure, effectively suppressing the crosstalk between the parallel amplifier and reducing the substrate coupling noise between the amplifiers.The measurement results show that this structure with PGR and PGR + NGR, the isolation between the amplifiers is increased by 29.2 and 8.1 dB respectively at 1 GHz, and the isolation between the amplifiers is increased by 8.1 and 2.5 dB at 2 GHz respectively. The chip is powered by a 1.8 V power supply and the single front-end amplifier The power consumption is 85mW, 12-way total power consumption is about 1W.