论文部分内容阅读
研究了用于SiCOH低介电常数薄膜刻蚀的CHF3气体在13.56MHz/2MHz,27.12MHz/2MHz和60MHz/2MHz双频电容耦合放电时的等离子体性质.发现2MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从13.56,27.12增大到60MHz,导致CF2基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF2基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果.
The plasma properties of CHF3 gas for SiCOH low dielectric constant film etching at 13.56MHz / 2MHz, 27.12MHz / 2MHz and 60MHz / 2MHz double-frequency capacitive coupling discharge were investigated. F group density increased; while the high frequency increased from 13.56,27.12 to 60MHz, resulting in an increase in the density of CF2 groups and an increase in the axial spatial heterogeneity of the F group density between the electrodes. According to the distribution of electron temperature The regularity and the relationship between the energy and the frequency of the high frequency source suggest that the generation of CF2 groups is mainly through the electron-neutral gas collision, while the generation of the F group is the result of the ion-neutral gas collision.