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基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平.
Based on the discrete GaAs s Schottky barrier diode, a high efficiency doubler of 190-225 GHz has been developed. The 50μm thick quartz circuit utilizes the undercutting technique to achieve good heat dissipation of the diode, reliable RF signal and DC ground. Through the numerical analysis, the diode nonlinear junction is simulated by lumped port, and the embedded impedance of the diode is extracted to design the impedance matching circuit. The maximum efficiency is 9.6% at 202 GHz. When the input driving power is 85.5 mW, Its output power is 8.25 mW. At 190-225 GHz, the frequency doubling efficiency is 7.5%. The frequency doubler has wide working frequency band and flat efficiency response curve, and its performance has reached the level reported in foreign literature.