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利用ＰｔＳｉ与Ｐ－Ｓｉ接触，研制成功肖特基势垒红对光电探测器（简称ＰｔＳｉ／Ｐ－ＳｉＩＲ－ＳＢＤ）。在液氮温度（７７Ｋ）下，对１．５２μｍ红外光，它的灵敏度为２．６９×１０－２Ａ／Ｗ，量子效率为２．４％，反偏４Ｖ时的漏电流为５×１０－５μＡ。此外，对ＰｔＳｉ／Ｐ－ＳｉＩＲ－ＳＢＤ的量子效率进行了计算机模拟计算。
The Schottky barrier red photodetector (PtSi / P-SiIR-SBD) was successfully developed by using PtSi and P-Si contacts. At liquid nitrogen temperature (77K), the sensitivity of 1.52μm infrared light is 2.69 × 10-2A / W, the quantum efficiency is 2.4% and the leakage current is 4 × 10- 5μA. In addition, the quantum efficiency of PtSi / P-SiIR-SBD was calculated by computer simulation.