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采用poly-Si(n~+)/UTSiO_2/n~+-Si/P-Si发射结结构,研制出参数与常规晶体管相近、能长期稳定工作、在-55～100℃温度范围内,h_(FE)温度系数小于20%的硅晶体管。
Using the structure of poly-Si (n ~ +) / UTSiO 2 / n ~ + -Si / P-Si emitter junction, the parameters are similar to those of conventional transistors and can work steadily for a long time. Under the temperature range of -55 ~ 100 ℃, FE) Silicon transistors with a temperature coefficient of less than 20%.