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用MOCVD方法在GaAs衬底上生长ZnSe-ZnS超晶格.用化学腐蚀方法在GaAs衬底上开一个通光窗口,使该窗口上仅剩有1～1.8μm厚的生长层.室温下测量了蚀孔后由于化学腐蚀造成生长层表面差异的ZnSe-ZnS超晶格的吸收光谱.研究了带有生长过渡层和无过渡层的超晶格质量对其吸收光谱性能的影响.发现过渡层的存在保护了超晶格激子吸收性能.在此基础上首次采用新工艺在3×3mm~2面积上把GaAs衬底金部腐蚀掉,剩下均匀、光滑的ZnSe-ZnS超晶格层,在其上做出了300×300μm~2的列阵,为在ZnSe-ZnS超晶格上实现光学双稳的集成化提供了必要条件.
The ZnSe-ZnS superlattice was grown on a GaAs substrate by MOCVD using a chemical etching method to make a pass-through window on the GaAs substrate so that only 1 ~ 1.8μm thick growth layer remained on the window. The absorption spectra of ZnSe-ZnS superlattices with different growth layers due to chemical etching after etching holes were studied.The influence of the superlattice quality with and without transition layer on the absorption spectra was investigated.The results show that the transition layer , Which protects the superlattice exciton absorption performance.On the basis of this, the new process is used to etch the gold part of GaAs substrate in the area of 3 × 3mm ~ 2, leaving a uniform and smooth ZnSe-ZnS superlattice layer , On which a 300 × 300μm ~ 2 array was made, which provided the necessary conditions for the optical bistable integration on the ZnSe-ZnS superlattice.