论文部分内容阅读
运用液相法生长成ZnO纳米线薄膜,并利用肖特基型异质结的发光原理,构造成功肖特基型ZnO纳米线二极管发光器件.在大于6V直流电压驱动下,观察到近紫外波段392nm处和可见光波段525nm的发射谱带.从单向导电特性及ZnO纳米线材料的能带结构等方面探讨了该种器件的电致发光机理.
ZnO thin films were grown by liquid-phase method, and the Schottky-type ZnO nanowire diode devices were successfully fabricated by using the Schottky-type heterojunction luminescence principle. Under the driving of DC voltage greater than 6V, 392nm and visible band 525nm.The emission mechanism of the device is discussed from the unidirectional conductive characteristics and the band structure of ZnO nanowire materials.