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一、液相外延—LPE LPE早在1963年就用于Ge隧道二极管的制备,后来发展为制备Ⅲ—Ⅳ族化合物及其混晶的常用有效技术。简单说来,LPE就是把生长晶体所需要的原材料(如GaAs、InP、InAs、Al等)及掺杂剂(Te、Sn、Si、Zn、Cd等)在一定温度下溶于溶剂(如Ga、In等)中,然后在生长温度下使溶液和衬底表面接触,溶液中的溶质(材料)在一定的生长条件下淀积在衬底表面形成外延层。
First, the liquid phase epitaxy - LPE LPE as early as 1963 for the preparation of Ge tunnel diode, and later developed for the preparation of III-IV compounds and their mixed crystal commonly used effective technology. In a nutshell, LPE dissolves raw materials (such as GaAs, InP, InAs, Al, etc.) and dopants (Te, Sn, Si, Zn, Cd etc.) , In, etc.) and then contacting the solution with the surface of the substrate at the growth temperature. The solute (material) in the solution is deposited on the surface of the substrate to form an epitaxial layer under certain growth conditions.