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采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-x)In2xO3(x=0.1—0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分x=0.2时,样品为单斜β-Ga2O3结构;x=0.5的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善,由非晶结构转变为具有(222)单一取向的立方In2O3结构;对于x=0.8,薄膜为立方In2O3结构,退火后薄膜的晶体质量得到提高.在可见光区薄膜本身的透过率均达到了85%以上,带隙宽度随样品中Ga含量的改变在3.76—4.43eV之间变化,且经退火处理后带隙宽度明显增大.
Ga 2 (1-x) In 2 x O 3 (x = 0.1-0.9) thin films were prepared on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) method. The structure, electrical and optical properties, The results show that when the In composition x = 0.2, the sample is monoclinic β-Ga2O3. When the sample is x = 0.5, the film has an amorphous structure, the structure of the film is obviously improved after annealing, (222) cubic In2O3 structure with a single orientation (222). For x = 0.8, the cubic In2O3 structure is annealed, and the film quality is improved after annealing.The transmittance of the film in the visible region reaches 85 %, The band gap width varies with the content of Ga in the sample between 3.76-4.43eV, and the band gap width increases obviously after annealing.