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设计了一种用于芯片静电放电(ESD)防护的双向可控硅(DDSCR)器件。该器件具有对称性或非对称性骤回I-V特性,可以用于多种应用场合。器件的最优静电防护性能达到94 V/μm。简洁的器件结构用于输入/输出保护,对内部电路的寄生效应小,人体模型ESD测试达到耐压等级3(超过4 kV)。在多电源芯片的静电防护中,双向可控硅器件可克服普通器件不能胜任的多模式静电事件的发生。首次提出了双向可控硅器件在高速多媒体接口中静电防护和反向驱动保护的应用。
A bidirectional thyristor (DDSCR) device designed for electrostatic discharge (ESD) protection of the chip is designed. The device features symmetrical or asymmetrical snapback I-V features for a variety of applications. The device has an optimum electrostatic protection of 94 V / μm. Simple device structure for input / output protection, low parasitics on internal circuitry, and human body model ESD testing up to withstand voltage class 3 (over 4 kV). In the multi-power chip ESD protection, triac devices can overcome the common device can not do multi-mode static electricity incident. For the first time, the application of bidirectional thyristor devices in electrostatic discharge protection and back-drive protection in high-speed multimedia interfaces was proposed.