论文部分内容阅读
提出一种改进的 DSOI结构 ,在保留 DSOI解决浮体效应和散热问题的基础上 ,能提高电路速度和驱动能力等器件性能 .采用不完全除去沟道下绝缘层的办法 ,使 DSOI器件的结构更接近 SOI.采用准二维器件模拟器MEDICI对结构进行模拟 ,结果证明这种改进后的结构使器件具有更优越的性能 .
An improved DSOI structure is proposed, which can improve the performance of the device such as circuit speed and driving ability while preserving the floating body effect and heat dissipation problem of DSOI.Using the method of not completely removing the insulating layer under the channel, the structure of the DSOI device is improved Close to SOI. The quasi-two-dimensional device simulator MEDICI was used to simulate the structure. The results show that the improved structure has more superior performance.