论文部分内容阅读
本文报导了以S_nO_2、Z_nO和γ—F_(?2)O_3三种半导体金属氧化物按一定比例混合后作为基体材料制成的气敏元件,实验表明,这种元件对C_4H_(10)敏感
In this paper, the gas sensing elements made of S_nO_2, Z_nO and γ-F_ (? 2) O_3 three kinds of semiconductor metal oxides mixed as a matrix material are reported. The experiments show that the elements are sensitive to C_4H_ (10)