An analytical drain current model on the basis of the surface potential is proposed for indium-gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with an
We fabricate Sm-doped Ca3Co4O9+δ (CCO) bulk materials in magnetic field during both processes of chemical synthesis and cold pressing. The structure and electr
The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placin
The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon su
The structure–activity relationship of functional materials is an everlasting and desirable research question for material science researchers, where character