以思想大解放作风大转变促进经济社会大发展

来源 :新一代(下半月) | 被引量 : 0次 | 上传用户:liongliong499
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
继续解放思想旨在牢固树立和全面落实科学发展观,进一步消除发展观认识上的误区,以创新的思维指导和推动改革开放,破解影响科学发展的难题.促进改革大深化、开放大推进、工作大落实、经济大发展、社会大和谐,以思想大解放作风大转变促进经济社会大发展.
其他文献
Tungsten-potassium (WK) alloy with ultrafine/fine grains and nano-K bubbles is fabricated through spark plasma sintering (SPS) and rolling process. In this stud
皖棉7号系安徽省国营农场华阳河总场棉科所,用乌于达4号×岱红岱杂交选育而成的陆地棉新品种。1992年经安徽省农作物品种审定委员会审定。特征特性该品种苗期长势中等,中、
Two-dimensional (2D) semiconductors isoelectronic to phosphorene have been drawing much attention recently due to their promising applications for next-generati
GaAs multiple concentric nano-ring structures (CNRs) are prepared with multistep crystallization procedures by droplets epitaxy on GaAs (001) to explore the inf
Mn:ZnSe/ZnS/L-Cys core-shell quantum dots (QDs) sensitized La-doped nano-TiO2 thin film (QDSTF) was prepared. X-ray photoelectron spectroscopy (XPS), nanosecond
An analytical drain current model on the basis of the surface potential is proposed for indium-gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with an
We fabricate Sm-doped Ca3Co4O9+δ (CCO) bulk materials in magnetic field during both processes of chemical synthesis and cold pressing. The structure and electr
The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placin
The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon su