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The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon substrate was investigated. The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of InGaN. The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region, and the latter is attributed to the increased compressive stress in the quantum well. However, when the electrical stress aging tests were performed at a current density of 100 A/cm2, LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress, resulting in the reduced light output power at low current density.