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结合变分法与自洽计算方法研究了流体静压力下应变闪锌矿(111)取向GaN/AlxGa1 -xN量子阱中受电子-空穴气体屏蔽的激子结合能.计算中,考虑了沿(111)取向生长多层结构时存在压电极化引起的内建电场.计算结果表明,考虑压力对双轴及单轴应变的调制以及禁带宽度、有效质量和介电常数等参数的压力效应时,激子结合能随压力的增大近似线性增加;且当电子-空穴气体密度大时,这一效应更加显著.当给定压力时,随着电子-空穴气面密度的增加,激子结合能先缓慢增加,但当密度达到大约1011cm-2时结合能开始迅速衰减.此外,当减小垒的厚度时,由于内建电场减弱,激子结合能显著增加.
The exciton-binding energy of electron-hole gas shielding in GaN / AlxGa1-xN (001) -oriented strainable zinc blende with hydrostatic pressure was studied by means of variational method and self-consistent method. In the calculation, (111) oriented multilayer structure, the built-in electric field caused by piezoelectric polarization exists.The calculated results show that the pressure on the biaxial and uniaxial strain modulation and the band gap, effective mass and dielectric constant pressure Effect, the exciton binding energy increases approximately linearly with increasing pressure, and this effect is more pronounced when the electron-hole gas density is large. With a given pressure, as the electron-hole gas density increases , The exciton binding energy first increases slowly, but the binding energy starts to decay rapidly when the density reaches about 1011 cm-2 Furthermore, exciton binding can be significantly increased by reducing the thickness of the barrier due to the decrease of the built-in electric field.