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最近,日本光技术共同研究所制备成用计算机自动制备优质大圆片光电集成电路用的GaAs衬底材料。当前制备GaAs单晶常用的方法是液封直拉法,即将液体状GaAs熔液倒入坩锅里,上面用其它液体覆盖成层状,在高压下使籽晶生长成单晶。这种制备工艺复杂,由熟练工的手工操作才能制备,因此容易导致缺陷。该所用计算机最佳地确定熔液和坩埚壁之间的温差,并根据熔解时的热、压力变化等条
Recently, the Japan Institute of Optics and Technology jointly prepared GaAs substrate material for the automatic production of high quality wafer optoelectronic integrated circuits using a computer. Currently, the common method for preparing GaAs single crystals is the liquid sealing method. The liquid GaAs melt is poured into a crucible, covered with a layer of other liquid, and the seed crystal is grown into a single crystal under high pressure. This preparation process is complicated and can only be prepared by a skilled worker by hand, thus easily causing defects. The computer used best determines the temperature difference between the melt and the crucible wall and, depending on the heat and pressure changes during melting